Publications

Selected

  • S. Giaremis, J. Kioseoglou, E. Chatzikyriakou, “High-throughput-based examination of density functional effects in intrinsic properties of SnS”, arxiv: 2302.09966 
  • H. Edlbauer, J. Wang, T. Crozes, P. Perrier, S. Ouacel, C. Geffroy, G. Georgiou, E. Chatzikyriakou, A. Lacerda-Santos, X. Waintal, D. Christian Glattli, P. Roulleau, J. Nath, M. Kataoka, J. Splettstoesser, M. Acciai, M. Cecilia da Silva Figueira, K. Öztas, A. Trellakis, T. Grange, O. M. Yevtushenko, S. Birner, and C. Bäuerle, “Semiconductor-based electron flying qubits: review on recent progress accelerated by numerical modelling”, EPJ Quantum Technology, 2022, doi: 10.1140/epjqt/s40507-022-00139-w
  • E. Chatzikyriakou, J. Wang, L. Mazzella, A. Lacerda-Santos, M. Cecilia da Silva Figueira, A. Trellaxis, S. Birner, T. Grange, C. Bäuerle, X. Waintal, “Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach”, Phys. Rev. Res., Dec 2022, doi: 10.1103/PhysRevResearch.4.043163
  • E. Chatzikyriakou, J. Kioseoglou, “Emergence of valley selectivity in monolayer tin (ii) sulphide”, RSC Nanoscale advances”, RSC Nanoscale Advances 2019, doi: 10.1039/C9NA00555B
  • E. Chatzikyriakou, P. Karafiloglou, J. Kioseoglou, “Ab initio quantum transport in AB-stacked bilayer penta-silicene using atomic orbitals”, RSC Advances 2018, doi: 10.1039/C8RA05652H
  • E. Chatzikyriakou, K. Morgan and C.H. de Groot, “Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond,” IEEE Trans. on El. Dev. 2018. doi: 10.1109/TED.2018.2792305
  • E. Chatzikyriakou, K. Potter and C.H. de Groot, “A systematic method for simulating total ionizing dose effects using the finite elements method,” J. Comp. El. 2017. doi: 10.1007/s10825-017-1027-2
  • E. Chatzikyriakou, W. Redman-White and C.H. de Groot, “Total Ionizing Dose, Random Dopant Fluctuations, and its combined effect in the 45 nm PDSOI node,” Microelectronics Reliability 2016. doi: 10.1016/j.microrel.2016.11.007
  • E. Chatzikyriakou, K. Potter, W. Redman-White and C. H. De Groot, “Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, Sep. 2016. doi: 10.1016/j.nimb.2016.09.007

Code & Datasets

  • E. Chatzikyriakou, J. Wang, L. Mazzella, A. Lacerda-Santos, M. Cecilia da Silva Figueira, A. Trellakis, S. Birner, Thomas Grange, C. Bäuerle, X. Waintal (2022), Dataset for ‘Unveiling the charge distribution of a GaAs-based nanoelectronic device’, doi: 10.5281/zenodo.6498343
  • E. Chatzikyriakou, A. Larcerda-Santos, X. Waintal, ‘ThoFeOne: Python 1D tools for the Thomas-Fermi self-consistent problem’, doi: 10.5281/zenodo.6505499
  • E. Chatzikyriakou, P. Karafiloglou, J. Kioseoglou (2018) Dataset for ‘Ab initio quantum transport in AB-stacked bilayer penta-silicene using atomic orbitals’, doi: 10.5281/zenodo.1439396
  • Modified version of Wannier90 code to print out the velocity matrix elements, github: link
  • E. Chatzikyriakou and C.H. de Groot (2017) Total Ionizing Dose TCAD simulation of 400 nm SiO2 capacitor, doi: 10.5258/SOTON/D137 
  • E. Chatzikyriakou and C.H. de Groot (2016) RDF and TID simulation of PDSOI 45nm MOSFET, doi: 10.5258/SOTON/403024 
  • E. Chatzikyriakou and C.H. de Groot (2016), 22 nm bulk FinFET Total Ionizing Dose simulation, doi 10.5258/SOTON/400301 
  • 400 nm SiO2 capacitor simulation of interface trap formation with state transitions in Sentaurus TCAD. github: link
  • Geant4 simulation of Non-Ionizing Energy Loss in Carbon Nanotube and Graphene FET structures. doi: 10.13140/RG.2.2.14483.07207

PhD Thesis

Simulation of total ionizing dose and random dopant fluctuations in sub-100 nm transistor nodes